Characterization of silicon carbide differential amplifiers at high temperature

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2007, Pages 120-123

  Patil, Amita C ^a   Fu, Xiao An ^a   Anupongongarch, Chompoonoot ^a   Mehregany, Mehran ^a   Garverick, Steven ^a  

^a Case Western Reserve University   (United States)

Author keywords

Differential amplifier; High temperature; JFET; Junction field effect transistor; Silicon carbide

Indexed keywords

AMPLIFIERS (ELECTRONIC); ANALOG CIRCUITS; ARSENIC COMPOUNDS; DATA ACQUISITION; DIFFERENTIAL AMPLIFIERS; ELECTRIC CONDUCTIVITY; LOGIC CIRCUITS; NETWORKS (CIRCUITS); NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SILICON CARBIDE; TECHNOLOGY TRANSFER;

COMPOUND SEMICONDUCTOR (CS); DIFFERENTIAL VOLTAGES; HIGH TEMPERATURE (HT); INTERCONNECT TECHNOLOGIES; N CHANNEL; OFF CHIP; PARASITICS; PASSIVE COMPONENTS; SENSOR INTERFACE CIRCUITS; SILICON CARBIDE (SIC); UNITY-GAIN FREQUENCY (UGF);

INTEGRATED CIRCUITS;

EID: 47349107493     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS07.2007.33     Document Type: Conference Paper

References (7)

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