Band-gap determination of the native oxide capping quantum dots by use of different kinds of conductive AFM probes: Example of InAs/GaAs quantum dots

IEEE Transactions on Electron Devices

Volumn 57, Issue 6, 2010, Pages 1455-1459

  Smaali, Kacem ^a,b   El Hdiy, Abbdelillah ^a   Molinari, Michael ^a   Troyon, Michel ^a  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

Atomic force microscopy (AFM); Oxidation; Quantum dots (QDs)

Indexed keywords

AFM; ATOMIC FORCE MICROSCOPY (AFM); BAND GAPS; BARRIER HEIGHTS; CONDUCTIVE AFM; CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTRICAL BEHAVIORS; ELECTRICAL MEASUREMENT; INAS; INAS/GAAS; INAS/GAAS QUANTUM DOTS; NATIVE OXIDES; QUANTUM DOT; QUANTUM DOTS; SINGLE QD;

ATOMS; ELECTRIC VARIABLES MEASUREMENT; OXIDATION; PROBES; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

ATOMIC FORCE MICROSCOPY;

EID: 77952744562     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2046076     Document Type: Article

References (20)

1. I. Tanaka, I. Kamiya, H. Sakaki, N. Qureshi, S.-J. Allen, and P.-M. Petroff, "Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip," Appl. Phys. Lett., vol.74, no.6, pp. 844-846, Feb. 1999. (Pubitemid 129615200)
2. Y. Okada, M. Miyagi, K. Akahane, Y. Luchi, and M. Kawabe, "Selforganized InGaAs quantum dots on GaAs (311)B studied by conductive atomic force microscope tip," J. Appl. Phys., vol.90, no.1, pp. 192-198, Jul. 2001.
3. K.-O. Vicaro, M.-A. Cotta, H.-R. Gutiérrez, and J.-R.-R. Bortoleto, "Spatially resolved electrical properties of InAs/InP quantum dots and wires," Nanotechnology, vol.14, no.5, pp. 509-514, May 2003.
4. M. Troyon, K. Smaali, M. Molinari, A. El Hdiy, G.-S. Girons, and G. Patriarche, "Local electronic transport through InAs/InP (0 0 1) quantum dots capped with a thin InP layer studied by an AFM conductive probe," Semicond. Sci. Technol., vol.22, no.7, pp. 755-762, Jul. 2007.
5. R. Wu, F. H. Lim, Z. M. Jiang, and X. J. Yang, "Effects of a native oxide layer on the conductive atomic force microscopy measurements of selfassembled Ge quantum dots," Nanotechnology, vol.17, no.20, pp. 5111- 5116, Oct. 2006.
6. L. Lee, C.-S. Ke, W.-C. Ke, C.-W. Ho, H.-Y. Huang, M.-C. Lee, W.-H. Chen, W.-C. Chou, and W.-K. Chen, "Current properties of GaN V-defect using conductive atomic force microscopy," Jpn. J. Appl. Phys., vol.45, no.31, pp. L817-L820, Aug. 2006.
7. M. Troyon and K. Smaali, "Influence of electron irradiation on the electronic transport mechanisms during the conductive AFM imaging of InAs/GaAs quantum dots capped with a thin GaAs layer," Nanotechnology, vol.19, no.25, pp. 255 709-255 715, Jun. 2008.
8. A. Lemaître, G. Patriarche, and F. Glas, "Composition profiling of InAs/GaAs quantum dots," Appl. Phys. Lett., vol.85, no.17, pp. 3717- 3719, Oct. 2004.
9. K. Smaali, J. Fauré, A. El Hdiy, and M. Troyon, "High-resolution scanning near-field EBIC microscopy: Application to the characterisation of a shallow ion implanted p+-n silicon junction," Ultramicroscopy, vol.108, no.6, pp. 605-612, May 2008.
10. C.-E. Pryor and M.-E. Pistol, "Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots," Phys. Rev. B, Condens. Matter, vol.72, no.20, pp. 205 311-1-205 311-11, Nov. 2005.
11. W. Frammelsberger, G. Benstetter, J. Kiely, and R. Stamp, "C-AFMbased thickness determination of thin and ultra-thin SiO2 films by use of different conductive-coated probe tips," Appl. Surf. Sci., vol.253, no.7, pp. 3615-3626, Jan. 2007.
12. K.-I. Shiramine, S. Muto, T. Shibayama, N. Sakaguchi, H. Ichinose, T. Kozaki, S. Sato, Y. Nakata, N. Yokoyama, and M. Taniwaki, "Tip artifact in atomic force microscopy observations of InAs quantum dots grown in Stranski-Krastanow mode," J. Appl. Phys., vol.101, no.3, pp. 033 527-1-033 527-5, Feb. 2007.
13. R.-H. Fowler and L. Nordheim, "Electron emission in intense electric fields," Proc. R. Soc. Lond. A, vol.119, no.781, pp. 173-181, Mar. 1928.
14. A. Murali, A. Barve, V.-J. Leppert, and S.-H. Risbud, "Synthesis and characterization of indium oxide nanoparticles," Nano Lett., vol.1, no.6, pp. 287-289, May 2001.
15. H.-F. Liu, G.-X. Hu, and H. Gong, "Growth mechanism and optical properties of In2O3 nanorods synthesized on ZnO/GaAs (111) substrate," J. Cryst. Growth, vol.311, no.2, pp. 268-271, Jan. 2009.
16. S. W. McKnight, E. D. Palik, and T. N. Bahr, "Cathodoluminescence studies of anodic oxides on GaAs," J. Vac. Sci. Technol., vol.17, no.5, pp. 967-970, Sep./Oct. 1980.
17. C. M. Finnie and P. W. Bohn, "Near-field photoluminescence of microcrystalline arsenic oxides produced in anodically processed gallium arsenide," Appl. Phys. Lett., vol.74, no.8, pp. 1096-1098, Feb. 1999.
18. B. Joshi, S.-S. Islam, H.-S. Mavi, V. Kumari, T. Islam, A.-K. Shukla, and Harsh, "Size-selective laser-induced etching of semi-insulating GaAs: Photoluminescence studies," Phys. E, vol.41, no.4, pp. 690-694, Feb. 2009.
19. G. Hollinger, R. Skheyta-Kabbani, and M. Gendry, "Oxides on GaAs and InAs surfaces: An X-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers," Phys. Rev. B, Condens.Matter, vol.49, no.16, pp. 11 159-11 167, Apr. 1994.
20. H. Zhou, W. Cai, and L. Zhang, "Photoluminescence of indium-oxide nanoparticles dispersed within pores of mesoporous silica," Appl. Phys. Lett., vol.75, no.4, pp. 495-497, Jul. 1999.