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Journal of Crystal Growth

Volumn 311, Issue 2, 2009, Pages 268-271

Growth mechanism and optical properties of In2O3 nanorods synthesized on ZnO/GaAs (1 1 1) substrate

(3) Liu, H F a Hu, G X b Gong, H b

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

A3. Physical vapor deposition processes; B1. Nanomaterials; B1. Oxides; B2. Semiconductor indium compounds

Indexed keywords

ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GROWTH (MATERIALS); INDIUM; INDIUM COMPOUNDS; NANORODS; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; OXYGEN; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACE DEFECTS; SYNTHESIS (CHEMICAL); THIN FILMS; THREE DIMENSIONAL; VAPORS; ZINC; ZINC OXIDE;

A3. PHYSICAL VAPOR DEPOSITION PROCESSES; B1. NANOMATERIALS; B1. OXIDES; B2. SEMICONDUCTOR INDIUM COMPOUNDS; BAND GAPS; GRAIN SIZES; GROWTH MECHANISMS; INDIUM OXIDE (206); OXYGEN PRESSURES; PHOTOLUMINESCENCE (PL) EMISSIONS; RADIO FREQUENCY (RF); ROOM-TEMPERATURE (RT); SUBSTRATE TEMPERATURE (ST); ZNO BUFFER LAYERS;

SEMICONDUCTING INDIUM;

EID: 58549105316 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.10.062 Document Type: Article

Times cited : (18)

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