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Volumn 41, Issue 4, 2009, Pages 690-694
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Size-selective laser-induced etching of semi-insulating GaAs: Photoluminescence studies
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Author keywords
Atomic force microscopy (AFM); Laser induced etching; Nanostructures; Photoluminescence spectroscopy
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Indexed keywords
ATOMIC PHYSICS;
ATOMIC SPECTROSCOPY;
ATOMS;
CHEMICAL REACTIONS;
ETCHING;
GALLIUM ALLOYS;
LASERS;
LIGHT EMISSION;
LUMINESCENCE;
NANOCRYSTALLINE ALLOYS;
NANOCRYSTALLITES;
NANOSTRUCTURES;
PHOTOLUMINESCENCE;
PHOTOLUMINESCENCE SPECTROSCOPY;
REDOX REACTIONS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING GALLIUM;
ATOMIC FORCE MICROSCOPY (AFM);
ETCH RATES;
EXPOSURE-TIME;
GAAS;
INITIAL STATE;
LASER-INDUCED ETCHING;
NANOCRYSTALLITE SIZES;
POROUS STRUCTURES;
QUANTUM CONFINEMENT MODELS;
REACTION BYPRODUCTS;
REACTION PROCESS;
SCANNING ELECTRONS;
SEM;
SEMI-INSULATING;
SIZE-SELECTIVE;
TIME DEPENDENTS;
TOP SURFACES;
ATOMIC FORCE MICROSCOPY;
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EID: 60349110234
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2008.11.010 Document Type: Article |
Times cited : (6)
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References (37)
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