High-resolution scanning near-field EBIC microscopy: Application to the characterisation of a shallow ion implanted p+-n silicon junction

Ultramicroscopy

Volumn 108, Issue 6, 2008, Pages 605-612

  Smaali, K ^a   Faure J ^a   El Hdiy, A ^a   Troyon, M ^a  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

Author keywords

AFM; C AFM; EBIC; p n Junction

Indexed keywords

ATOMIC FORCE MICROSCOPY; ION IMPLANTATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR JUNCTIONS; SILICON; TOPOGRAPHY;

ELECTRON BEAM INDUCED CURRENT (EBIC); SILICON JUNCTION;

ELECTRON BEAMS;

SILICON;

ANALYTIC METHOD; ARTICLE; ELECTRON BEAM INDUCED CURRENT MICROSCOPY; IMAGE ENHANCEMENT; IMAGE QUALITY; INSTRUMENT; MICROSCOPY; SCANNING ELECTRON MICROSCOPE; SCANNING NEAR FIELD OPTICAL MICROSCOPY; SCANNING PROBE MICROSCOPY; TOPOGRAPHY;

EID: 41949125560     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2007.10.009     Document Type: Article

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