Improvement of hole injection in phenyl-substituted electroluminescent devices by reduction of oxygen deficiency near the indium tin oxide surface

Applied Physics Letters

Volumn 80, Issue 24, 2002, Pages 4659-4661

  Low, Beeling ^a   Zhu, Furong ^a   Zhang, Keran ^a   Chua, Soojin ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER INJECTION; DUAL LAYER; FOUR-POINT PROBE METHOD; HOLE INJECTION; HOLE-INJECTING ANODES; IN-SITU; INDIUM TIN OXIDE; LOW CONDUCTIVITY; OXYGEN PLASMA TREATMENTS; POLY(P-PHENYLENEVINYLENE); REDUCTION OF OXYGEN; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPY;

ELECTROLUMINESCENCE; INDIUM; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; LUMINESCENT DEVICES; OPTOELECTRONIC DEVICES; OXYGEN; PLASMA APPLICATIONS; PROBES; SECONDARY ION MASS SPECTROMETRY; SHEET RESISTANCE; TIN; TIN OXIDES;

DIRECT INJECTION;

EID: 79956011283     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1484544     Document Type: Article

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