Enhancement-mode n-channel gan mosfets using Hfo2 as a gate oxide

IEICE Transactions on Electronics

Volumn E91-C, Issue 7, 2008, Pages 1001-1003

  Sugiura, Shun ^a   Kishimoto, Shigeru ^a   Mizutani, Takashi ^a   Kuroda, Masayuki ^b   Ueda, Tetsuzo ^b   Tanaka, Tsuyoshi ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

Enhancement; GaN; HfO2; MOSFETs

Indexed keywords

GALLIUM NITRIDE; GATES (TRANSISTOR); HAFNIUM OXIDES; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; IMAGE ENHANCEMENT; SILICON COMPOUNDS;

ENHANCEMENT MODES; GATE INSULATOR; GATE OXIDE; GATE STRUCTURE; HFO2; MAXIMUM TRANSCONDUCTANCE; MOSFETS; NORMALLY OFF;

MOSFET DEVICES;

EID: 77953524807     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e91-c.7.1001     Document Type: Article

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