AlGaN/GaN high electron mobility transistor with thin buffer layers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 A, 2003, Pages 1588-1589

  Ao, Jin Ping ^a   Wang, Tao ^a   Kikuta, Daigo ^b   Liu, Yu Huai ^a   Sakai, Shiro ^b   Ohno, Yasuo ^b  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b Nitride Semiconductors Co Ltd   (Japan)

Author keywords

AlGaN GaN; Field effect mobility; HEMT; Screening effect; Thin buffer layer

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS;

FAT FIELD-EFFECT TRANSISTOR; HALL MEASUREMENTS; SCREENING EFFECT; THIN BUFFER LAYER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037594109     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1588     Document Type: Article

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