Effect of spacer layer thickness on energy level width narrowing in GaInAs/InP resonant tunneling diodes grown by organo-metallic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 2, 1998, Pages 445-449

  Oobo, Takashi ^a   Takemura, Riichiro ^a   Sato, Ken ^a   Suhara, Michihiko ^a   Miyamoto, Yasuyuki ^a   Furuya, Kazuhito ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaInAs InP; Impurity ion; OMVPE; Resonant level width; Resonant tunneling diodes; Spacer layer thickness

Indexed keywords

CRYSTAL IMPURITIES; ELECTRODES; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH;

RESONANT TUNNELING DIODES (RTD); SPACER LAYERS;

SEMICONDUCTOR DIODES;

EID: 0031998370     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.445     Document Type: Article

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