Ultra-thin InAlP/InGaAs heterojunctions grown by metal-organic vapor-phase epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2009, Pages 222-225

  Sugiyama, Hiroki ^a   Yokoyama, Haruki ^a   Shigekawa, Naoteru ^a   Enoki, Takatomo ^a   Teranishi, Atsushi ^b   Suzuki, Safumi ^b   Asada, Masahiro ^b  

^a NTT CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETERO-INTERFACES; HIGH ELECTRON MOBILITY; HIGH-PEAK CURRENTS; INP; METALORGANIC VAPOR PHASE EPITAXY; MODULATION-DOPED; MOVPE; PEAK-TO-VALLEY RATIOS; RESONANT TUNNELING DIODES; ULTRA-THIN;

CRYSTAL GROWTH; ELECTRON MOBILITY; ELECTRON TUBE DIODES; ETCHING; HETEROJUNCTIONS; INDIUM; INDIUM PHOSPHIDE; METALLORGANIC VAPOR PHASE EPITAXY; RESONANT TUNNELING; SEMICONDUCTOR DIODES; TUNNEL DIODES; VAPORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 70349478506     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2009.5012488     Document Type: Conference Paper

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