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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 5 A, 2001, Pages 3114-3119

Effects of growth temperature on electrical properties of InP-based pseudomorphic resonant tunneling diodes with ultrathin barriers grown by molecular beam epitaxy

(2) Osaka, J a Matsuzaki, H a

a NTT CORPORATION (Japan)

Author keywords

3D growth; Asymmetry; Hetero interface; InAs; InP; Peak current; RTD; Segregation

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; MOLECULAR BEAM EPITAXY; RESONANT TUNNELING; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

RESONANT TUNNELING DIODES (RTD);

SEMICONDUCTOR DIODES;

EID: 0035328749 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.3114 Document Type: Article

Times cited : (9)

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