Fundamental oscillation of up to 831 GHz in GaInAs/AlAs resonant tunneling diode

Applied Physics Express

Volumn 2, Issue 5, 2009, Pages

  Suzuki, Safumi ^a   Teranishi, Atsushi ^a   Hinata, Kensuke ^a   Asada, Masahiro ^a   Sugiyama, Hiroki ^b   Yokoyama, Haruki ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EMITTER DOPING; FUNDAMENTAL OSCILLATIONS; NEGATIVE DIFFERENTIAL CONDUCTANCE; OSCILLATION FREQUENCY; OUTPUT POWER; PEAK TO VALLEY CURRENT RATIO; PLANAR SLOT ANTENNAS; RESONANT TUNNELING DIODES; ROOM TEMPERATURE; SPACER LAYER; ULTRA-HIGH;

ANTENNA ARRAYS; ELECTRON TUBE DIODES; FREQUENCY DIVIDING CIRCUITS; RESONANT TUNNELING; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM DOTS; TUNNEL DIODES;

SLOT ANTENNAS;

EID: 66949113546     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.054501     Document Type: Article

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