Resonant tunneling diodes with very high peak current density using thin barrier and high emitter doping

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2008, Pages 265-266

  Teranishi, A ^a   Suzuki, S ^a   Sugiyama, H ^b   Yokoyama, H ^b   Asada M , ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 64849109208     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2008.4800832     Document Type: Conference Paper

References (4)

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2. N. Orihashi, S. Suzuki and M. Asada: Appl. Phys. Lett., 87 (2005) 233501.
3. H.Sugiyama, H.Matsuzaki, Y.Oda, H.Yokoyama, T.Enoki and T.Kobayashi: Jpn. J. Appl. Phys., 44 (2005) 7314.
4. N. Orihashi, S. Hattori, S. Suzuki and M. Asada: Jpn. J. Appl. Phys., 44 (2005) 7809.