High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition

Applied Physics Letters

Volumn 70, Issue 21, 1997, Pages 2867-2869

  Mirabedini, Ali R ^a   Mawst, Luke J ^a   Botez, Dan ^a   Marsland, Robert A ^b  

^a University of Wisconsin Madison   (United States)

^b Focused Research   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004458212     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119027     Document Type: Article

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