Growth and characterization of InAlP/InGaAs double barrier RTDs

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 555-558

  Neumann, S ^a   Velling, P ^a   Prost, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

A1. HRXRD; A3. Metalorganic vapor phase epitaxy; B2. Inalp; B2. Inp; B3. RTD

Indexed keywords

CURRENT DENSITY; DIODES; ELECTRON TUNNELING; ETCHING; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; MONOCHROMATORS; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM WELLS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

HRXRD; INALP; INP; RTD;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 9944256074     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.120     Document Type: Conference Paper

References (4)

1. Y. Yamane, H. Yokoyama, T Makimura, T. Kobayashi, Y. Ishii, Proceedings of the International Conference on InP and Related Materials' (IPRM 1999), Davos, Switzerland, May 1999.
2. P. Veiling, Progress in Crystal Growth and Characterization of Materials 13 (1) (2000) 85.
3. F. Schulze-Kraasch, P. Veiling, S. Neumann, W. Prost, Materials Science and Engineering B 110 (2) (2004) 161-167.
4. M. Haase, W. Prost, P. Veiling, Q. Liu, F.J. Tegude, Thin Solid Films 319 (1998) 25-28.