Roughness on resonant tunneling characteristics

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 400-403

  Shinohara, M ^a   Yokoyama, H ^a   Wada, K ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; CRYSTAL ORIENTATION; INTERFACES (MATERIALS); MORPHOLOGY; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS;

INDIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE; INTERFACE ROUGHNESS; LATTICE MATCHING; RESONANT TUNNELING CHARACTERISTICS; SUBSTRATE MISORIENTATION;

HETEROJUNCTIONS;

EID: 0029698082     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)