Analysis of NI silicide abnormal growth mechanism using advanced TEM techniques

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 580-583

  Kudo, S ^a   Hirose, Y ^a   Hashikawa, N ^a   Yamaguchi, T ^a   Kashihara, K ^a   Maekawa, K ^a   Asai, K ^a   Murata, N ^a   Asayama, K ^a   Murakami, E ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Abnormal growth; Electron tomography; Failure analysis; Ni suicide; Spatially resolved Electron Energy Loss Spectroscopy (EELS); Transmission Electron Microscope (TEM)

Indexed keywords

CRYSTAL DEFECTS; DIAGNOSTIC RADIOGRAPHY; ELECTRIC IMPEDANCE TOMOGRAPHY; FAILURE ANALYSIS; GROWTH (MATERIALS); MECHANISMS; MEDICAL IMAGING; MICROSTRUCTURE; NICKEL; NICKEL ALLOYS; NICKEL COMPOUNDS; POWDERS; QUALITY ASSURANCE; RELIABILITY; SILICIDES; THREE DIMENSIONAL; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

ABNORMAL GROWTH; ELECTRON TOMOGRAPHY; NI SUICIDE; SPATIALLY-RESOLVED ELECTRON ENERGY-LOSS SPECTROSCOPY (EELS); TRANSMISSION ELECTRON MICROSCOPE (TEM);

CRYSTAL MICROSTRUCTURE;

EID: 51549098626     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558948     Document Type: Conference Paper

References (12)

1. M. Tsuchiaki et al., "Junction Leakage Generation by NiSi Thermal Instability Characterized Using Damage-Free n+/p Silicon Diodes", Japanese Journal of Applied Physics Vol. 43 No. 8A, 2004, pp5166-5173
2. K. Okubo et al., "Dependence of thermal stability of NiSi/Si on crystal orientation", Proc. Advanced Metallization Conference, 2007, pp132-133.
3. V. Teodorescu et al, "In situ transmission electron microscopy study of Ni suicide phases formed on (001) Si active lines", Journal of Applied Physics Vol. 90 No. 1, 2007, pp167-174.
4. A. Steegen et al., "65nm CMOS Technology for low power applications", IEDM Tech. Dig., 2005, pp.69-72.
5. Y. Y. Chiang et al., "Study of Pt addition to Solve NiSi Integration Issies on CMOS Devices", Proc. Advanced Metallization Conference, 2005, pp.193-198.
6. S. Kudo et al., "Three-dimensional fine structure observation of advanced ULSI devices using electron tomography", Proceedings of The 16th International Microscopy Congress, 2006, p 1440.
7. K. Asayama et al., "Polymorphs Discrimination of Nickel Suicides in Device Structure by Improved Analyses of Low Loss Electron Energy Low Spectrum", Japanese Journal of Applied Physics, Vol. 46, No. 22, 2007, pp.L528-L530.
8. T. Yamaguchi et al., "Suppression of Anomalous Gate Edge Leakage Current by Control of Ni Silicidation Region using Si Ion Implantation Technique", IEDM Tech. Dig., 2006, pp855-858.
9. P. A. Midgley, M. Weyland, "3D electron microscopy in the physical sciences: the development of Z-contrast and EFTEM tomography", Ultramicroscopy 96, 2003, pp413-431.
10. S. Terada et al., "Time-resolved acquisition technique for spatially-resolved electron energy-loss spectroscopy by energy-filtering TEM", Journal of Electron Microscope, Vol. 51, 2002, pp291-296.
11. K. Kashihara et al., "Improvement of thermal stability of nickel suicide using N2 ion implantation prior to nickel film deposition", Proceedings of The 6th International Workshop on Junction Technology, 2006, pp 176-179
12. T. Yamaguchi et al., "A Novel Low Leakage-Current Ni Suicide Process in nMOSFETs on Si (110) Substrate", IEDM Tech. Dig., 2007, pp139-142.