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Volumn 25, Issue 6, 2010, Pages 831-836
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Study of epitaxial selective area growth In1-xGaxAs films by synchrotron μ-XRF mapping
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Author keywords
[No Author keywords available]
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Indexed keywords
ANALYTICAL METHOD;
BEAM LINES;
CHEMICAL COMPOSITIONS;
COMPOSITIONAL CHARACTERIZATION;
EMPIRICAL APPROACH;
EUROPEAN SYNCHROTRON RADIATION FACILITIES;
FIBER OPTICS COMMUNICATION;
FUNDAMENTAL PARAMETERS;
GROWTH PARAMETERS;
GROWTH TECHNIQUES;
HIGH FREQUENCY;
HIGH PERFORMANCE PRODUCTS;
HIGH-RESOLUTION X-RAY DIFFRACTION;
INFLUENCE COEFFICIENT;
LABORATORY TECHNIQUES;
LONG DISTANCES;
REFERENCE MATERIAL;
SELECTIVE AREA GROWTH;
SPATIALLY RESOLVED;
SYNCHROTRON RADIATION X-RAY FLUORESCENCES;
TERNARY SEMICONDUCTORS;
X RAY BEAM;
FILM GROWTH;
LIGHT;
MONOLITHIC INTEGRATED CIRCUITS;
OPTIMIZATION;
OPTOELECTRONIC DEVICES;
PARAMETER ESTIMATION;
SURFACE TREATMENT;
SYNCHROTRON RADIATION;
SYNCHROTRONS;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
SEMICONDUCTOR GROWTH;
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EID: 77952688863
PISSN: 02679477
EISSN: 13645544
Source Type: Journal
DOI: 10.1039/c000435a Document Type: Article |
Times cited : (22)
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References (41)
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