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Volumn 25, Issue 6, 2010, Pages 831-836

Study of epitaxial selective area growth In1-xGaxAs films by synchrotron μ-XRF mapping

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL METHOD; BEAM LINES; CHEMICAL COMPOSITIONS; COMPOSITIONAL CHARACTERIZATION; EMPIRICAL APPROACH; EUROPEAN SYNCHROTRON RADIATION FACILITIES; FIBER OPTICS COMMUNICATION; FUNDAMENTAL PARAMETERS; GROWTH PARAMETERS; GROWTH TECHNIQUES; HIGH FREQUENCY; HIGH PERFORMANCE PRODUCTS; HIGH-RESOLUTION X-RAY DIFFRACTION; INFLUENCE COEFFICIENT; LABORATORY TECHNIQUES; LONG DISTANCES; REFERENCE MATERIAL; SELECTIVE AREA GROWTH; SPATIALLY RESOLVED; SYNCHROTRON RADIATION X-RAY FLUORESCENCES; TERNARY SEMICONDUCTORS; X RAY BEAM;

EID: 77952688863     PISSN: 02679477     EISSN: 13645544     Source Type: Journal    
DOI: 10.1039/c000435a     Document Type: Article
Times cited : (22)

References (41)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.