AlGaInAs selective area growth by LP-MOVPE: Experimental characterisation and predictive modelling

IEE Proceedings: Optoelectronics

Volumn 153, Issue 6, 2006, Pages 276-279

  Dupuis, N ^a   Decobert, J ^a   Lagree P Y ^b   Lagay, N ^a   Cuisin, C ^a   Poingt, F ^a   Ramdane, A ^c   Kazmierski, C ^a  

^a ALCATEL THALES III V LAB   (France)

^b SORBONNE UNIVERSITÉ   (France)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; INTEGRATED OPTICS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

DIFFUSION MODEL; LOW-PRESSURE EPITAXY; SELECTIVE AREA GROWTH (SAG);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33751313527     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20060049     Document Type: Conference Paper

References (8)

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