SCOPUS 정보 검색 플랫폼

Computer Physics Communications

Volumn 93, Issue 1, 1996, Pages 53-81

Interface simulation of strained and non-abrupt III-V quantum wells. Part 1: Band profile calculation

(1) Lamberti, C a

a UNIVERSITY OF TURIN (Italy)

Author keywords

Buried interfaces; III V semiconductors; Quantum wells; Semiconductor heterojunctions; Strained layers

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; EPITAXIAL GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); LATTICE CONSTANTS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

BURIED INTERFACES; QUATERNARY EPITAXIALLY STRAINED GROWTH; STRAINED LAYERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029733355 PISSN: 00104655 EISSN: None Source Type: Journal
DOI: 10.1016/0010-4655(95)00118-2 Document Type: Article

Times cited : (19)

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