Nonvolatile static random access memory using resistive switching devices: Variable-transconductance metal-oxide-semiconductor field-effect-transistor approach

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 1, 2010, Pages 0402091-0402093

  Yamamoto, Shuu'ichirou ^a,b   Shuto, Yusuke ^a,b   Sugahara, Satoshi ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISTABLES; CIRCUIT APPLICATION; CIRCUIT OPERATION; CURRENT DRIVES; FIELD-EFFECT; JAPAN SOCIETY OF APPLIED PHYSICS; METAL OXIDE SEMICONDUCTOR; MOS-FET; MOSFETS; NON-POLAR; NON-VOLATILE; RESISTANCE STATE; RESISTIVE SWITCHING; SOURCE TERMINAL; SPICE MACRO-MODEL; SRAM CELL; STATIC RANDOM ACCESS MEMORY; STORAGE NODES;

DIELECTRIC DEVICES; FIELD EFFECT SEMICONDUCTOR DEVICES; HEAT RADIATION; MOSFET DEVICES; SPICE; SWITCHING SYSTEMS; TRANSCONDUCTANCE; TRANSISTORS;

STATIC RANDOM ACCESS STORAGE;

EID: 77952617850     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.040209     Document Type: Article

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