HFinFET: A scalable, high performance, low leakage hybrid n-channel FET

IEEE Transactions on Nanotechnology

Volumn 9, Issue 3, 2010, Pages 342-344

  Majumdar, Kausik ^a   Majhi, Prashant ^b   Bhat, Navakanta ^a   Jammy, Raj ^b  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b SEMATECH   (United States)

Author keywords

Coupled Poisson Schrodinger equations; FinFET; HEMT; Transistor scaling

Indexed keywords

3D DEVICE SIMULATION; BENCHMARKING TECHNIQUES; COUPLED POISSON-SCHRODINGER EQUATIONS; DESIGN AND SIMULATION; EXCELLENT PERFORMANCE; GATE LENGTH; LOW LEAKAGE; N-CHANNEL; NMOSFET; STATE OF THE ART; STATE-CONTROL; TRANSISTOR SCALING;

HIGH ELECTRON MOBILITY TRANSISTORS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS;

SCHRODINGER EQUATION;

EID: 77952605897     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2042459     Document Type: Article

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