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Volumn 7, Issue 3-4, 2010, Pages 529-532

Addition of SiF4 to standard SiH4+H2 plasma: An effective way to reduce oxygen contamination in μc-Si:H films

Author keywords

[No Author keywords available]

Indexed keywords

DARK CONDUCTIVITY; DEPOSITION TEMPERATURES; HYDROGEN GAS; OXYGEN CONTAMINATION; OXYGEN INCORPORATION; REDUCTION OF OXYGEN; SILICON TETRAFLUORIDE;

EID: 77952573676     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982798     Document Type: Conference Paper
Times cited : (9)

References (16)
  • 10
    • 77952557699 scopus 로고    scopus 로고
    • A. Abramov, P. Roca i Cabarrocas, H. Chen, S. Park, K. Park, J. Huh, J. Choi, C. Kim, and J. H. Souk (to be published).
    • A. Abramov, P. Roca i Cabarrocas, H. Chen, S. Park, K. Park, J. Huh, J. Choi, C. Kim, and J. H. Souk (to be published).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.