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Volumn 7, Issue 3-4, 2010, Pages 529-532
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Addition of SiF4 to standard SiH4+H2 plasma: An effective way to reduce oxygen contamination in μc-Si:H films
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Author keywords
[No Author keywords available]
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Indexed keywords
DARK CONDUCTIVITY;
DEPOSITION TEMPERATURES;
HYDROGEN GAS;
OXYGEN CONTAMINATION;
OXYGEN INCORPORATION;
REDUCTION OF OXYGEN;
SILICON TETRAFLUORIDE;
METALLIC FILMS;
OXYGEN;
MICROCRYSTALLINE SILICON;
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EID: 77952573676
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200982798 Document Type: Conference Paper |
Times cited : (9)
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References (16)
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