Delay time analysis of AlGaN/GaN heterojunction field-effect transistors with AlN or SiN surface passivation

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Tanaka, Nariaki ^a   Sumida, Yasunobu ^b   Kawai, Hiroji ^b   Suzuki, Toshi Kazu ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b POWDEC K K   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROJUNCTION; ALN; DELAY TIME ANALYSIS; EFFECTIVE SATURATION; ELECTRON VELOCITY; HIGH CURRENT GAIN; HIGH FREQUENCY CHARACTERISTICS; INTRINSIC TRANSCONDUCTANCE; REDUCTION EFFECTS; SAPPHIRE SUBSTRATES; SATURATION VELOCITY; SELF-HEATING; SIN SURFACES; TEMPERATURE DEPENDENCE;

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HEATING; HETEROJUNCTIONS; SILICON NITRIDE;

PASSIVATION;

EID: 77952540709     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C099     Document Type: Article

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