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Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

First-principles analysis of indirect-to-direct band gap transition of ge under tensile strain

(4) Hoshina, Yutaka a Iwasaki, Kojiro a Yamada, Akira a Konagai, Makoto a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL TENSILE STRAIN; DIRECT BAND GAP; FIRST-PRINCIPLES; FIRST-PRINCIPLES CALCULATION; HIGH CARRIER MOBILITY; IN-PLANE; INDIRECT BAND GAP; MONOLITHIC INTEGRATION; PROMISING MATERIALS; SEMI-EMPIRICAL METHODS; STRAINED-GE;

CARRIER MOBILITY; ENERGY GAP; FINITE ELEMENT METHOD; GERMANIUM; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL PROPERTIES; PHOTONIC DEVICES; SILICON;

TENSILE STRAIN;

EID: 77952510018 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.04C125 Document Type: Article

Times cited : (32)

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