Organometallic vapor phase epitaxial growth of GaN on ZrNAlNSi substrates

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Oliver, Mark H ^a   Schroeder, Jeremy L ^a   Ewoldt, David A ^a   Wildeson, Isaac H ^a   Rawat, Vijay ^a   Colby, Robert ^a   Cantwell, Patrick R ^a   Stach, Eric A ^a   Sands, Timothy D ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; EPITAXIAL GROWTH; FULL WIDTH AT HALF MAXIMUM; GALLIUM NITRIDE; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; NONMETALS; OHMIC CONTACTS; ORGANOMETALLICS; PHASE INTERFACES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; VAPORS;

AMERICAN INSTITUTE OF PHYSICS (AIP); BACK REFLECTOR (BR); ELECTRICAL ISOLATION; GAN FILMS; GROWTH OF GAN; HALF MAXIMUM; INTERFACE LAYERS; LAYER STACKING; ORGANOMETALLIC VAPOR PHASE EPITAXY (OMVPE); REACTION BARRIERS; SILICON (111) SUBSTRATES; SUBSTRATE TEMPERATURE (ST); VAPOR PHASE EPITAXIAL (VPE); X-RAY ROCKING CURVE (XRC);

GALLIUM ALLOYS;

EID: 47549093917     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2953541     Document Type: Article

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