A micromachined silicon capacitive temperature sensor for wide temperature range applications

Journal of Micromechanics and Microengineering

Volumn 20, Issue 5, 2010, Pages

  Ma, Hong Yu ^a   Huang, Qing An ^a   Qin, Ming ^a   Lu, Tingting ^a  

^a Southeast University   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; BOTTOM ELECTRODES; BOTTOM LAYERS; DIELECTRIC LAYER; EFFECT OF STRAIN; ELECTRICAL CAPACITANCE; LOW POWER; MECHANICAL CHARACTERISTICS; MICROMACHINED; MICROMACHINED SILICON; SENSING CAPACITORS; SILICON MATERIALS; SILICON-ON-INSULATOR SUBSTRATES; STRIP MODEL; TEMPERATURE RANGE; TEMPERATURE VARIATION; THERMAL EXPANSION COEFFICIENTS; THERMAL RESPONSE;

ATOMIC FORCE MICROSCOPY; CAPACITANCE; DIELECTRIC PROPERTIES; ELECTRODES; NANOCANTILEVERS; SILICON COMPOUNDS; SILICON OXIDES; TEMPERATURE SENSORS; THERMAL EXPANSION;

SILICON;

EID: 77951913739     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/20/5/055036     Document Type: Article

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