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Volumn 2008, Issue , 2008, Pages

PECVD-ONO: A new deposited firing stable rear surface passivation layer system for crystalline silicon solar cells

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EID: 45749088129     PISSN: 1687563X     EISSN: 16875648     Source Type: Journal    
DOI: 10.1155/2008/485467     Document Type: Article
Times cited : (30)

References (37)
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    • Hofmann M., Schmidt C., Kohn N., Detailed analysis of amorphous silicon passivation layers deposited in industrial in-line and laboratory-type pecvd reactors Proceedings of the 22nd European Photovoltaic Solar Energy Conference and Exhibition September 2007 Milan, Italy 1528 1531
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    • Hofmann, M.1    Schmidt, C.2    Kohn, N.3
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    • Quasi-steady-state photoconductance, a new method for solar cell material and device characterization
    • May Washington, DC, USA
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    • Sinton, R.A.1    Cuevas, A.2    Stuckings, M.3
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    • Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors
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    • Cuevas, A.1    Sinton, R.A.2


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