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Applied Physics Letters

Volumn 96, Issue 15, 2010, Pages

Atomic resolution in tunneling induced light emission from GaAs(110)

(4) Reinhardt, Maria a Schull, Guillaume b Ebert, Philipp c Berndt, Richard a

a UNIVERSITY OF KIEL (Germany)

b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG (France)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC RESOLUTION; BAND EDGE LUMINESCENCE; EMISSION INTENSITY; GAAS; HOLE INJECTION; POTENTIAL FLUCTUATIONS; SCANNING TUNNELING MICROSCOPES; VALENCE-BAND MAXIMUMS;

ELECTRON INJECTION; GALLIUM ALLOYS; GALLIUM ARSENIDE; HOLE TRAPS; LIGHT; WIND TUNNELS;

SEMICONDUCTING GALLIUM;

EID: 77951562278 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3360203 Document Type: Article

Times cited : (11)

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