Fabrication and characteristics of P -channel silicon-oxide-nitride-oxide- silicon flash memory device based on bulk fin shaped field effect transistor structure

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1266-1270

  Cho, Il Hwan ^a   Park, Tai Su ^b   Choe, Jeong Dong ^b   Cho, Hye Jin ^b   Park, Donggun ^b   Shin, Hyungcheol ^a   Park, Byung Gook ^a   Lee, Jong Duk ^a   Lee, Jong Ho ^c  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DATA STORAGE EQUIPMENT; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

FIN SHAPED FIELD EFFECT TRANSISTOR (FINFET); SILICON-OXIDE-NITRIDE-OXIDE-SILICON (SONOS); SOURCE/DRAIN FLOATING;

FLASH MEMORY;

EID: 33744821911     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2197510     Document Type: Article

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