Fin width variation effects on program disturbance characteristics in a NAND type bulk fin SONOS flash memory

2007 International Semiconductor Device Research Symposium, ISDRS

Volumn , Issue , 2007, Pages

  Cho, Il Hwan ^a   Park, Il Han ^a   Lee, Jong Ho ^b   Shin, Hyungcheol ^a   Park, Byung Gook ^a   Lee, Jong Duk ^a  

^a Seoul National University   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 44949127317     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2007.4422279     Document Type: Conference Paper

References (3)

1. I.H.Cho et al. "Fabrication and characteristics of P-channel silicon-oxide-nitride-oxide-silicon flash memory device based on bulk fin shaped field effect transistor structure," Journal of Vacuum Science and Technology B, vol. 24, no. 3, pp. 1266, May/June 2006.
2. K.D. Suh et al. "A 3.3 V 32 Mb NAND flash memory with incremental step pulse programming scheme," IEEE J.Solid-State Circuits, vol. SC-30, no. 11, pp. 1149, Nov. 1995.
3. A. Burenkov et al. "Corner effect in double and triple gate FinFETs," European Solid-State Device Research, pp. 135, Sept. 2003.