Channel doping concentration and fin width effects on self-boosting in NAND-type SONOS flash memory array based on bulk-finFETs

2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

Volumn , Issue , 2009, Pages 251-254

  Cho, Seongjae ^a   Li, Dong Hua ^a   Kim, Doo Hyun ^a   Cho, Il Hwan ^a   Park, Byung Gook ^b  

^a Seoul National University   (South Korea)

^b University in Gyeonggi Province   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

3D DEVICE SIMULATION; BIT LINES; BOOSTING EFFECTS; CHANNEL DOPINGS; CHANNEL POTENTIAL; CHARGE REDISTRIBUTION; FIN WIDTHS; FINFETS; NAND-TYPE FLASH MEMORY; PROCESS VARIABLES; PROGRAM OPERATION; PROGRAM VOLTAGE; SONOS FLASH MEMORY;

BORON; BORON COMPOUNDS; FINS (HEAT EXCHANGE); NANOTECHNOLOGY;

FLASH MEMORY;

EID: 70449652179     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NMDC.2009.5167521     Document Type: Conference Paper

References (7)

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2. I. H. Cho, B.-G. Park, J. D. Lee, T.-S. Park, S. Y. Choi, and J. H. Lee, "Body-tied double-gate SONOS flash (omega flash) memory device built on a bulk Si wafer," J. Korean Phys. Soc., vol. 44, pp. 83-86, Jan. 2004.
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7. I. H. Cho, I. H. Park, J.-H. Lee, H. Shin, B.-G. Park, and J. D. Lee, "Fin width variation effects on program disturbance characteristics in a NAND type bulk fin SONOS flash memory," Int. Semiconductor Device Research Symp., WP9-01-07, Maryland, USA, Dec. 2007.