Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Dietrich, C P ^a   Lange, M ^a   Benndorf, G ^a   Lenzner, J ^a   Lorenz, M ^a   Grundmann, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY DISORDER; CHEMICAL COMPOSITIONS; EXCITON LOCALIZATION; IMPURITY ACTIVATION; LOCALIZATION EFFECT; RANDOM POTENTIALS; RELATIVE IMPORTANCE; SEMI-CONDUCTOR ALLOYS; SHALLOW DEFECTS; SHALLOW DONORS;

ACTIVATION ENERGY; ALLOYS; DEFECTS; EXCITONS; IMPURITIES; POINT DEFECTS; SEMICONDUCTOR COUNTERS; ZINC;

CERIUM ALLOYS;

EID: 77951226139     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/3/033030     Document Type: Article

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