Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots

Superlattices and Microstructures

Volumn 23, Issue 2, 1998, Pages 381-387

  Xu, Z Y ^a   Lu, Z D ^a   Yuan, Z L ^a   Yang, X P ^a   Zheng, B Z ^a   Xu, J Z ^a   Ge, W K ^b   Wang, Y ^b   Wang, J ^b   Chang, L L ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

InAs GaAs; Quantum dots

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; EXCITONS; HETEROJUNCTIONS; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS; WETTING;

EXCITON RECOMBINATION; THERMAL QUENCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031653664     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0196     Document Type: Article

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