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Physica Status Solidi C: Conferences

Volumn 1, Issue 9, 2004, Pages 2322-2327

On the nature of Si-doping in AlGaN alloys

(4) Wagener, M C a James, G R a Leitch, A W R a Omnes F b

a NELSON MANDELA METROPOLITAN UNIVERSITY (South Africa)

b CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; EFFECTIVE MASS-STATE (EMS); PERSISTENT PHOTOCONDUCTIVITY (PPC); SILICON DOPING;

ALUMINUM ALLOYS; CAPACITANCE; ELECTRIC POTENTIAL; HALL EFFECT; IONIZATION; PHASE COMPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SILICON; SPECTROSCOPY; SUPERCONDUCTING TRANSITION TEMPERATURE; TEMPERATURE CONTROL; THERMOANALYSIS;

SEMICONDUCTOR DOPING;

EID: 4444249959 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200404838 Document Type: Conference Paper

Times cited : (4)

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