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Volumn 3, Issue 4, 2006, Pages 812-816
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Phosphorus-doped ZnMgTe bulk crystals grown by Vertical Bridgman Method
a
SAGA UNIVERSITY
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
EXCITONS;
HALL EFFECT;
PHOSPHORUS;
PHOTOLUMINESCENCE;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR DOPING;
CARRIER CONCENTRATION;
CRYSTAL STRUCTURE;
LIGHT TRANSMISSION;
METAL CASTINGS;
ZINC;
BRIDGMAN TECHNIQUE;
HALL MEASUREMENTS;
SINGLE CRYSTALLINE WAFERS;
CRYSTAL GROWTH;
CRYSTAL GROWTH FROM MELT;
61.66.FN;
72.80.EY;
78.55.ET;
81.10.FQ;
FREE-TO-BOUND TRANSITIONS;
PHOTOLUMINESCENCE SPECTRUM;
SPECIFIC CONTACT RESISTANCES;
VERTICAL BRIDGMAN TECHNIQUE;
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EID: 33646194161
PISSN: 16101634
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1002/pssc.200564672 Document Type: Conference Paper |
Times cited : (8)
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References (11)
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