Ge-modified Si(100) substrates for the growth of 3C-SiC (100)

Applied Physics Letters

Volumn 88, Issue 21, 2006, Pages

  Zgheib, Ch ^a   McNeil, L E ^b   Masri, P ^c   Forster Ch ^d   Morales, F M ^d   Stauden, Th ^d   Ambacher, O ^d   Pezoldt, J ^d  

^a NOTRE DAME UNIVERSITY   (Lebanon)

^b University of North Carolina at Chapel Hill   (United States)

^c UNIVERSITÉ MONTPELLIER 2   (France)

^d ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; RESIDUAL STRAIN; SILICON SUBSTRATE;

CARBONIZATION; EPITAXIAL GROWTH; GERMANIUM; MONOLAYERS; RAMAN SCATTERING; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

SILICON CARBIDE;

EID: 33744771057     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2206558     Document Type: Article

References (25)

1. P. Djemia, Y. Roussigń, G. F. Diras, and K. M. Jackson, J. Appl. Phys. 95, 2324 (2004).
2. S. Nishino, J. A. Powel, and H. A. Wills, Appl. Phys. Lett. 42, 460 (1983).
3. X. A. Fu, R. Jezeski, Ch. A. Zorman, and M. Mehregany, Appl. Phys. Lett. 84, 341 (2004).
4. T. Chassagne, G. Ferro, C. Gourbeyre, M. Le Berre, D. Barbier, and Y. Monteil, Mater. Sci. Forum 353-356, 155 (2001).
5. S. Veprek, Th. Kunstmann, D. Volm, and B. K. Meyer, J. Vac. Sci. Technol. A 15, 10 (1997).
6. J. Camassel, J. Vac. Sci. Technol. B 16, 1648 (1998).
7. J.-H. Park, J.-H. Kim, Y. Kim, B.-T. Lee, S.-J. Jang, C.-K. Moon, and H.-J. Song, Appl. Phys. Lett. 83, 1989 (2003).
8. Z. C. Zhang, Y. H. Chen, D. B. Li, F. Q. Zhang, S. Y. Yang, B. S. Ma, G. S. Sun, Z. G. Wang, and X. P. Zhang, J. Cryst. Growth 257, 321 (2003).
9. Y. Irokawa, M. Kodama, and T. Kachi, Jpn. J. Appl. Phys., Part 1 40, 5907 (2001).
10. T. Fuyuki, T. Hatayama, and H. Matsunami, Phys. Status Solidi B 202, 359 (1997).
11. V. Cimalla, W. Attenberger, J. K. N. Lindner, B. Stritzker, and J. Pezoldt, Mater. Sci. Forum 338-342, 285 (2000).
12. B. Burkland, Z. Y. Xie, J. H. Edgar, M. Ervin, J. Chaudhuri, and S. Farsinivas, J. Electrochem. Soc. 149, G550 (2002).
13. T. T. Cheng, P. Pirouz, and J. A. Powel, Mater. Res. Soc. Symp. Proc. 148, 229 (1998).
14. Y. Gao, J. H. Edgar, J. Chaudhuri, S. N. Cheema, M. V. Sidorov, and D. N. Braski, J. Cryst. Growth 191, 439 (1998).
15. F. M. Morales, Ch. Zgheib, S. I. Molina, D. Araújo, R. García, C. Fernández, A. Sanz-Hervás, P. Masri, P. Weih, Th. Stauden, V. Cimalla, O. Ambacher, and J. Pezoldt, Phys. Status Solidi C 1, 341 (2004).
16. Ch. Förster, V. Cimalla, O. Ambacher, and J. Pezoldt, Mater. Sci. Forum 483-485, 173 (2005).
17. Z. C. Feng, C. C. Tin, R. Hu, and J. Williams, Thin Solid Films 266, 1 (1995).
18. Z. C. Feng, W. J. Choyke, and J. A. Powell, J. Appl. Phys. 64, 6827 (1988).
19. S. Hearne, E. Chason, J. Han, J. A. Floro, J. Figiel, J. Hunter, H. Amano, and I. S. T. Tsong, Appl. Phys. Lett. 74, 356 (1999).
20. P. Masri, Phys. Rev. B 52, 16627 (1995).
21. J. Pezoldt, P. Masri, M. R. Laridjani, M. Averous, T. Wöhner, J. A. Schaefer, Th. Stauden, G. Ecke, R. Pieterwas, and L. Spieß, Mater. Sci. Forum 338-342, 289 (2000).
22. J. Pezoldt, Ch. Zgheib, P. Masri, M. Averous, F. M. Morales, R. Kosiba, G. Ecke, P. Weih, and O. Ambacher, Surf. Interface Anal. 36, 969 (2004).
23. Ch. Zgheib, P. Masri, P. Weih, O. Ambacher, and J. Pezoldt, Mater. Sci. Forum 457-460, 301 (2004).
24. P. Masri, Th. Stauden, J. Pezoldt, and M. Averous, Phys. Status Solidi A 187, 439 (2001).
25. V. Cimalla and K. Zekentes, Mater. Sci. Forum 389-393, 747 (2002).