Crystallinity of 3C-SiC films grown on Si substrates

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 191-194

  Yagi, K ^a   Nagasawa, H ^a  

^a HOYA CORPORATION   (Japan)

Author keywords

Anti Phase Boundary; Crystallinity; Twin Boundary

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ELECTRONIC PROPERTIES; FILM GROWTH; GRAIN BOUNDARIES; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; SUPERCONDUCTING FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ANTI PHASE BOUNDARY; CRYSTALLINITY; TWIN BOUNDARY;

SILICON CARBIDE;

EID: 3743061518     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.191     Document Type: Article

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