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Applied Physics Letters

Volumn 90, Issue 10, 2007, Pages

Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers

(4) Chow, W W a Kneissl, M b Northrup, J E c Johnson, N M c

a SANDIA NATIONAL LABORATORIES (United States)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

c PALO ALTO RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASING POLARIZATION; NEAR INFRARED III-V LASERS; THRESHOLD CURRENTS;

BAND STRUCTURE; ELECTRIC FIELDS; OPTICAL GAIN; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 33947170697 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2679969 Document Type: Article

Times cited : (31)

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