Hysteresis reduction and measurement range enhancement of carbon nanotube based NO2 gas sensors by pulsed gate voltages

Procedia Chemistry

Volumn 1, Issue 1, 2009, Pages 1431-1434

  Mattmann, Moritz ^a   Helbling, Thomas ^a   Durrer, Lukas ^a   Roman, Cosmin ^a   Pohle, Roland ^b   Fleischer, Maximilian ^b   Hierold, Christofer ^a  

^a ETH ZURICH   (Switzerland)

^b SIEMENS AG   (Germany)

Author keywords

carbon nanotube; carbon nanotube transistor; gate hysteresis reduction; NO2 sensor; pulsed gate voltage

Indexed keywords

CARBON NANOTUBE TRANSISTORS; GATE HYSTERESIS REDUCTION; GATE VOLTAGES; HYSTERESIS REDUCTION; PULSED GATE VOLTAGE;

CHEMICAL SENSORS; FIELD EFFECT TRANSISTORS; HYSTERESIS; NITROGEN COMPOUNDS; REDUCTION; SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBES;

EID: 71549124655     PISSN: 18766196     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.proche.2009.07.357     Document Type: Conference Paper

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