Hysteresis contributions to the apparent gate pulse refreshing of carbon nanotube based sensors

Nanotechnology

Volumn 20, Issue 34, 2009, Pages

  Ervin, Matthew H ^a   Dorsey, Andrew M ^a   Salaets, Natalie M ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE ELECTRODES; GATE PULSE; MEASUREMENT ARTIFACTS;

CARBON NANOTUBES; HYSTERESIS; SENSORS;

FIELD EFFECT TRANSISTORS;

AMMONIA; CARBON NANOTUBE;

ARTICLE; ARTIFACT; DEVICE; ELECTRODE; FIELD EFFECT TRANSISTOR; HYSTERESIS; MEASUREMENT; OBSERVATIONAL STUDY; PRIORITY JOURNAL; SENSOR; TIME; CHEMISTRY; GAS; METHODOLOGY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY;

AMMONIA; ARTIFACTS; GASES; MICROSCOPY, ELECTRON, SCANNING; NANOTECHNOLOGY; NANOTUBES, CARBON;

EID: 70249143943     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/34/345503     Document Type: Article

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