Synthesis and characterization of GaN nanowires by ammoniating Ga 2 O 3 /Cr thin films deposited on Si(1 1 1) substrates

Applied Surface Science

Volumn 256, Issue 16, 2010, Pages 4883-4887

  Shi, Feng ^a   Wang, Zouping ^a   Xue, Chengshan ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

GaN nanowires; Growth mechanism; Magnetron sputtering; Microstructure

Indexed keywords

CHROMIUM COMPOUNDS; CRYSTAL STRUCTURE; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; MAGNETRON SPUTTERING; MICROSTRUCTURE; NANOWIRES; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SINGLE CRYSTALS; THIN FILMS; X RAY DIFFRACTION; ZINC SULFIDE;

EMISSION PROPERTIES; GAN NANOWIRES; GROWTH DIRECTIONS; GROWTH MECHANISMS; HEXAGONAL WURTZITE STRUCTURE; HIGH QUALITY; PHOTOLUMINESCENCE SPECTRUM; SYNTHESIS AND CHARACTERIZATIONS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77950918380     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.02.086     Document Type: Article

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