Formation of GaN film by ammoniating Ga2O3/Al2O3 deposited on Si(lll) substrate

Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

Volumn 34, Issue 2, 2005, Pages 312-315

  Wei, Qinqin ^a   Xue, Chengshan ^a   Sun, Zhencui ^a   Cao, Wentian ^a   Zhuang, Huizhao ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

Ammoniating; Ga2O3 Al2O3 film; GaN; Magnetron sputtering

Indexed keywords

EID: 14844362621     PISSN: 1002185X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)