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Volumn 389-393, Issue 1, 2002, Pages 29-34

Growth and defect reduction of bulk SiC crystals

Author keywords

Diameter enlargement; Low angle grain boundaries; Micropipes; Stacking faults

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DEFECT DENSITY; GRAIN BOUNDARIES; STACKING FAULTS;

EID: 0038563939     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.29     Document Type: Article
Times cited : (17)

References (11)
  • 1
    • 34247221429 scopus 로고    scopus 로고
    • D. Hobgood, M. Brady, W. Brixius, G. Fechko, R. Glass, D. Henshall, J. Jenny, R. Leonard, D. Malta, St.G. Müller, V. Tsvetkov and C.H. Carter, Jr.: Mater. Sci. Forum 338-342 (2000), p. 3.
    • D. Hobgood, M. Brady, W. Brixius, G. Fechko, R. Glass, D. Henshall, J. Jenny, R. Leonard, D. Malta, St.G. Müller, V. Tsvetkov and C.H. Carter, Jr.: Mater. Sci. Forum Vol. 338-342 (2000), p. 3.
  • 8
    • 34247210063 scopus 로고    scopus 로고
    • N. Ohtani, M. Katsuno, T. Fujimoto, H. Tsuge, T. Aigo and H. Yashiro: Extended Abstracts of 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), p. 14 (Nara, Japan, 2000).
    • N. Ohtani, M. Katsuno, T. Fujimoto, H. Tsuge, T. Aigo and H. Yashiro: Extended Abstracts of 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), p. 14 (Nara, Japan, 2000).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.