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Volumn 389-393, Issue 1, 2002, Pages 29-34
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Growth and defect reduction of bulk SiC crystals
a a a a a |
Author keywords
Diameter enlargement; Low angle grain boundaries; Micropipes; Stacking faults
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Indexed keywords
COMPUTER SIMULATION;
CRYSTAL GROWTH;
CRYSTAL STRUCTURE;
DEFECT DENSITY;
GRAIN BOUNDARIES;
STACKING FAULTS;
LOW ANGLE GRAIN BOUNDARIES;
MICROPIPES;
PHYSICAL VAPOR TRANSPORT GROWTH;
STACKING FAULT FORMATION;
CRYSTALLOGRAPHIC DEFECTS;
DIAMETER ENLARGEMENT;
FORMATION MECHANISM;
PHYSICAL VAPOR TRANSPORT GROWTHS;
QUALITY IMPROVEMENT;
THERMAL PROFILES;
SILICON CARBIDE;
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EID: 0038563939
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.29 Document Type: Article |
Times cited : (17)
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References (11)
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