Extremely high efficiency 280 nm-band emission from quaternary InAlGaN quantum wells realized by controlling Si-doped layers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Fujikawa, Sachie ^a,c   Hirayama, Hideki ^a,c   Takano, Takayoshi ^b   Tsubaki, Kenji ^b  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b PANASONIC CORPORATION   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN; BAND EMISSION; BARRIER LAYERS; CANDIDATE MATERIALS; DEEP ULTRAVIOLET; DOPED LAYERS; EMISSION EFFICIENCIES; HIGH EFFICIENCY; HIGH INTENSITY; INALGAN; INALGAN BUFFERS; INTEGRATED INTENSITIES; INTERNAL QUANTUM EFFICIENCY; LP-MOCVD; N-ALGAN; OXYGEN IMPURITY; PL EMISSION; QUANTUM WELL; ROOM TEMPERATURE; SI-DOPING;

DOPING (ADDITIVES); LIGHT EMITTING DIODES; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); OXYGEN; SEMICONDUCTOR QUANTUM WELLS; SILICON; SURFACE ROUGHNESS;

QUANTUM EFFICIENCY;

EID: 77950637532     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880955     Document Type: Article

References (19)

1. H. Hirayama, J. Appl. Phys. 97, 091191 (2005).
2. S. Fujikawa, T. Takano, H. Hirayama, and Y. Kondo, Jpn. J. Appl. Phys. 47, 2941 (2008).
3. A. Kinoshita, H. Hirayama, M. Ainoya, A. Hirata, and Y. Aoyagi, Appl. Phys. Lett. 77, 175 (2000).
4. J. Han, M. H. Crawford, R. J. Shul, J. J. Figiel, M. Banas, L. Zhang, Y. K. Song, H. Zhou, and A. V. Nurmikko, Appl. Phys. Lett. 73, 1688 (1998).
5. T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 78, 399 (2001).
6. J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Madavilli, R. Pachipulusu, M. Shatalov, G. Simin, J. W. Yang, and M. Asif Khan, Appl. Phys. Lett. 81, 4910 (2002).
7. W. H. Sun, V. Adivarahan, M. Shatalov, Y. Lee, S. Wu, J. W. Yang, J. P. Zhang, and M. Asif Khan, Jpn. J. Appl. Phys. 43, L1419 (2004).
8. V. Adivarahan, W. H. Sun, A. Chitnis, M. Shatalov, S. Wu, H. P. Maruska, and M. Asif Khan, Appl. Phys. Lett. 85, 2175 (2004).
9. H. Hirayama, K. Akita, T. Kyono, T. Nakamura, and K. Ishibashi, Jpn. J. Appl. Phys. 43, L1241 (2004).
10. M. Kneissl, Z. Yang, M. Teepe, C. Knollenberg, N. M. Johnson, A. Usikov, and V. Dmitriev, Jpn. J. Appl. Phys. 45, 3905 (2006).
11. Y. Taniyasu, M. Kasu, and T. Makimoto, Nature 441, 325 (2006).
12. H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata, Appl. Phys. Lett. 91, 071901 (2007).
13. H. Hirayama, N. Noguchi, T. Yatabe, and N. Kamata, Appl. Phys. Express 1, 051101 (2008).
14. S.Chichibu, D.A. Cohen, M.P. Mack, A.C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J. E. Bowers, U.K. Mishra, L.A. Coldren, D. R. Clarke, and S. P. Denbaars, Appl. Phys. Lett. 73, 4, 496 (1998).
15. M. S. Minsky, S. Chichibu, S. B. Fleischer, A. Cp.. Abare, j. E. Bowers, E.L. Hu, S.Keller, U. K. Mishra, and S. P. Denbaars, Jpn. J. Appl. Phys. 37, L1362 (1998).
16. S. Keller, S. F. Chichibu, M. S. Minsky, E. Hu, U. K. Mishra, and S. P. DenBaars, J. Cryst. Growth 195, 258 (1998).
17. S. Chichibu, A. C. Abare, M. P. Mack, M. S. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S. B. Fleischer, S. Keller, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, D. A. Cohen, S. P. Denbaars, K. Wada, T. Sota, and S. Nakamura, Mater. Sci. Eng. B 59, 298 (1999).
18. V. Lebedev, F. M. Morales, H. Romaus, S. Krischok, G. Ecke, V. Cimalla, M. Himmerlich, T. Stauden, D. Cengher, and O. Ambacher, J. Appl. Phys. 98, 093508 (2005).
19. H. Hirayama, M. Ainoya, A. Kinoshita, A. Hirata, and Y. Aoyagi, Appl. Phys. Lett. 80, 2057 (2002).