SCOPUS 정보 검색 플랫폼

ECS Transactions

Volumn 18, Issue 1 PART 1, 2009, Pages 205-211

Reliability of copper interconnects: Stress-induced voids

(4) Gambino, Jeffrey P a Lee, Tom C a Chen, Fen a Sullivan, Timothy D a

a IBM MICROELECTRONICS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAP LAYERS; COPPER INTERCONNECTS; CU-INTERCONNECTS; SEED LAYER; STRESS-INDUCED VOIDS; THERMAL EXPANSION MISMATCH; VOID SIZE;

THERMAL EXPANSION;

GRAIN GROWTH;

EID: 77950665594 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.3096451 Document Type: Conference Paper

Times cited : (6)

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