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Volumn 107, Issue 6, 2010, Pages

Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study

(5) Kim, Y H a Ruh, H a Noh, Y K b,c Kim, M D c Oh, J E d

a Korea Research Institute of Standards and Science (South Korea)

b WOOREE LST Co Ltd (South Korea)

c Chungnam National University (South Korea)

d Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC ORIENTATION RELATIONSHIPS; DISLOCATION EVOLUTION; FLAT SURFACES; GAN ISLANDS; GAN LAYERS; GROWTH BEHAVIOR; GROWTH TIME; MICROSTRUCTURAL PROPERTIES; ORIENTATION RELATIONSHIP; PATTERNED SAPPHIRE SUBSTRATE; SAPPHIRE SURFACE; THREADING DISLOCATION; TRANSMISSION ELECTRON MICROSCOPE;

COALESCENCE; ELECTRON MICROSCOPES; GALLIUM NITRIDE; RECRYSTALLIZATION (METALLURGY); SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 77950580987 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3327004 Document Type: Conference Paper

Times cited : (38)

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