Investigation of the fabrication mechanism of self-assembled GaAs quantum rings grown by droplet epitaxy

Nanotechnology

Volumn 19, Issue 36, 2008, Pages

  Tong, C Z ^a   Yoon, S F ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ARSENIDE; ANNEALING; ARSENIC; ATOMIC PHYSICS; ATOMS; COMPUTER NETWORKS; CRYSTAL GROWTH; DROP FORMATION; DROPS; FLUID MECHANICS; GALLIUM; INDIUM ARSENIDE; INTERFACIAL ENERGY; NANORINGS; NANOSTRUCTURES; SURFACE CHEMISTRY; SURFACE DIFFUSION; SURFACE TENSION;

DROPLET EPITAXY; SELF-ASSEMBLED; SURFACE ENERGIES;

GALLIUM ALLOYS;

GALLIUM; QUANTUM DOT;

ANALYSIS; ARTICLE; ATOM; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; DIFFUSION; DROPLET EPITAXY; NANOFABRICATION; PRIORITY JOURNAL;

EID: 51349111739     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/36/365604     Document Type: Article

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