Comparison between the electrical properties of ZnO nanowires based field effect transistors fabricated by back- and top-gate approaches

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 11, 2008, Pages 6010-6016

  Park, Y K ^a   Umar, Ahmad ^a   Kim, S H ^a   Kim, J H ^a   Lee, E W ^a   Vaseem, M ^a   Hahn, Y B ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Back and top gate; Field Effect Transistors (FETs); ZnO nanowires

Indexed keywords

BACK- AND TOP-GATE; ELECTRICAL PROPERTIES; FIELD EFFECTS; METALLIC ZINC POWDERS; PHOTOLITHOGRAPHY PROCESSES; SILICON SUBSTRATES; SINGLE NANOWIRES; SOURCE MATERIALS; ZNO NANOWIRES;

DIELECTRIC RELAXATION; ELECTRIC PROPERTIES; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; FABRICATION; GROWTH (MATERIALS); MATERIALS PROPERTIES; MESFET DEVICES; NANOWIRES; OXYGEN; SEMICONDUCTING ZINC COMPOUNDS; THERMAL EVAPORATION; TRANSISTORS; ZINC; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

NANOTUBE; ZINC OXIDE;

ARTICLE; CHEMISTRY; COMPARATIVE STUDY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; MICROELECTRODE; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MICROELECTRODES; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SURFACE PROPERTIES; TRANSISTORS; ZINC OXIDE;

EID: 58149242313     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.478     Document Type: Article

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