Mott transition field effect transistor: a nanodevice?

Journal of Electroceramics

Volumn 4, Issue 2, 2000, Pages 339-344

  Newns, D M ^a   Doderer, T ^a   Tsuei, C C ^a   Donath, W M ^a   Misewich, J A ^a   Gupta, A ^a   Grossman, B M ^a   Schrott, A ^a   Scott, B A ^a   Pattnaik, P C ^a   Von Gutfeld, R J ^a   Sun, J Z ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC INSULATORS; FERROELECTRIC MATERIALS; GATES (TRANSISTOR); NANOTECHNOLOGY; PERMITTIVITY; PEROVSKITE; SEMICONDUCTOR JUNCTIONS; STRONTIUM COMPOUNDS;

MOORE LAW; MOTT TRANSITION FIELD EFFECT TRANSISTOR; NANOSCALE;

MOSFET DEVICES;

EID: 0034205681     PISSN: 13853449     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1009914609532     Document Type: Article

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